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Dual-Side Cooling Comes to 650-V GaN for 800-V AI Data Centers
Reported by Power Electronics News on 19 October 2026
What it means for hiring
A dual-side cooled package for 650 V gallium nitride devices aimed at 800 V DC data centre architectures, set against the TOLT variants it is intended to improve on.
Packaging keeps turning out to be where the 800 volt data centre race is actually decided. The device physics is largely settled; what limits a design now is getting the heat out of a package small enough to keep the power density worth having. That puts the scarcity in package design, thermal simulation and the qualification engineers who prove a new package survives, rather than in device design where most people assume it sits. It is a narrow discipline and the people in it tend to have been doing it a long time, often at one employer. Teams that have been looking for another power device designer for six months would frequently do better to hire a packaging engineer instead.
Read the original at Power Electronics News .
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