Power Electronics
Navitas Selected for U.S. Army 10kV SiC Development Program
Reported by Power Electronics News on 1 October 2026
Power Electronics
Reported by Power Electronics News on 1 October 2026
Navitas has been chosen by the US Army Research Laboratory for ALATTIS, a programme to develop and validate a domestic manufacturing process for silicon carbide IGBTs and PiN diodes rated at 10 kV and above, for defence systems and critical infrastructure. Navitas's GeneSiC portfolio currently runs from 650 V to 6.5 kV, and the company points to earlier work on 6.5 kV thyristors, 10 to 15 kV PiN diodes and 6.5 kV MOSFETs.
Ten kilovolt silicon carbide is where power electronics meets the grid directly, without a transformer in between, and it is one of the hardest device problems in the industry. The skills involved, from thick epitaxy and edge termination to high-voltage packaging and reliability testing, are concentrated in a few companies and research centres in the US, Japan and Europe. Defence programmes also come with nationality and clearance requirements, which shrink the pool further. European device makers working on the same voltage class will find that the engineers they want are being asked to choose between commercial and defence work, and that the defence offer is getting stronger.
Read the original at Power Electronics News .
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